DD1200S12H4

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Infineon Technologies

DIODE MOD GP 1200V AGIHMB130-2

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Infineon Technologies

DIODE MOD GP 1200V AGIHMB130-2

Technical Specifications

Parameters and characteristics for this part

Specification	DD1200S12H4

Diode Configuration	2 Independent
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	Module
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	AG-IHMB130-2
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	2.35 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Diode Configuration	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Speed	Speed	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Configuration	Current - Collector (Ic) (Max) [Max]	Vce(on) (Max) @ Vge, Ic	Input
Infineon Technologies DD1200S12H4	1.2 kV	AG-IHMB130-2	Standard	150 °C	-40 °C	Module	2 Independent	Chassis Mount	2.35 V	Standard Recovery >500ns	200 mA
Infineon Technologies DD1200S17H4B2BOSA2	1700 V	AG-IHMB130-1	Standard	150 °C	-40 °C	Module	2 Independent	Chassis Mount	2.1 V	Standard Recovery >500ns	200 mA
Infineon Technologies DD1200S12H4HOSA1		Module				Module		Chassis Mount				1200000 W	1200 V	2 Independent	1200 A	2.35 V	Standard
Infineon Technologies DD1200S45KL3B5NOSA1	4500 V	A-IHV130-4	Standard	125 °C	-50 °C	Module	2 Independent	Chassis Mount	3.1 V	Standard Recovery >500ns	200 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode Array 2 Independent 1200 V Chassis Mount Module

Technical documentation and resources