CSD23382F4T
Active-12-V, P CHANNEL NEXFET™ POWER MOSFET, SINGLE LGA 0.6 MM X 1 MM, 76 MOHM, GATE ESD PROTECTION
CSD23382F4T
Active-12-V, P CHANNEL NEXFET™ POWER MOSFET, SINGLE LGA 0.6 MM X 1 MM, 76 MOHM, GATE ESD PROTECTION
Description
General part information
CSD23382F4 Series
This 66-mΩ, 12-V P-channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.
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Technical Specifications
Parameters and characteristics for this part
| Specification | CSD23382F4T |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 3.5 A |
| Drain to Source Voltage (Vdss) | 12 V |
| Drive Voltage (Max Rds On) | 1.8 V |
| Drive Voltage (Min Rds On) | 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Max) | 1.35 nC |
| Input Capacitance (Ciss) (Max) | 235 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 3-XFDFN |
| Package Name | 3-PICOSTAR |
| Power Dissipation (Max) | 500 mW |
| Rds On (Max) | 76 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 8 V |
| Vgs(th) (Max) | 1.1 V |
Pricing
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