TK65S04N1L,LXHQ
ActiveToshiba Semiconductor and Storage
12V - 300V MOSFETS, N-CH MOSFET, 40 V, 65 A, 0.0043 Ω@10V, DPAK+
TK65S04N1L,LXHQ
ActiveToshiba Semiconductor and Storage
12V - 300V MOSFETS, N-CH MOSFET, 40 V, 65 A, 0.0043 Ω@10V, DPAK+
Description
General part information
TK65S04N1L Series
N-Channel 40 V 65A (Ta) 107W (Tc) Surface Mount DPAK+
Technical Specifications
Parameters and characteristics for this part
| Specification | TK65S04N1L,LXHQ |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 65 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 39 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 2550 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 175 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Package Name | DPAK+ |
| Power Dissipation (Max) | 107 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 4.3 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.5 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
TK65S04N1L,LXHQ | Datasheet
Datasheet
Parasitic Oscillation and Ringing: Power MOSFET Application Notes
Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2
TK65S04N1L Data sheet/Japanese
Hints and Tips for Thermal Design part3
Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes
Structures and Characteristics: Power MOSFET Application Notes
Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system
Power Factor Correction (PFC) Circuits: Power MOSFET Application Notes
Reverse Recovery Operation and Destruction of MOSFET Body Diode
MOSFET Avalanche Ruggedness: Power MOSFET Application Notes
MOSFET Secondary Breakdown
Motor Control (Vacuum Cleaners)
Maximum Ratings: Power MOSFET Application Notes
Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes
Simplified CFD Model Application Note
Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices
Resonant Circuits and Soft Switching
U-MOSⅨ-H 60V Low VDS spike TPH1R306P1
MOSFET Gate Drive Circuit: Power MOSFET Application Notes
Hints and Tips for Thermal Design for Discrete Semiconductor Devices
Avalanche energy calculation
Calculating the Temperature of Discrete Semiconductor Devices
Selection Guide MOSFETs 2025 Rev1.0
Derating of the MOSFET Safe Operating Area
Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes
RC Snubbers for Step-Down Converters
Electrical Characteristics: Power MOSFET Application Notes
MOSFET Self-Turn-On Phenomenon
Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter
Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2
MOSFET SPICE model grade
Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes