TK65S04N1L Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
12V - 300V MOSFETS, N-CH MOSFET, 40 V, 65 A, 0.0043 Ω@10V, DPAK+
| Part | Package / Case | Technology | Current - Continuous Drain (Id) (Ta) | Drain to Source Voltage (Vdss) | Package Name | FET Type | Vgs (Max) | Operating Temperature | Vgs(th) (Max) | Gate Charge (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Input Capacitance (Ciss) (Max) | Mounting Type | Qualification | Rds On (Max) | Grade | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | DPAK (2 Leads + Tab) SC-63 TO-252-3 | MOSFET (Metal Oxide) | 65 A | 40 V | DPAK+ | N-Channel | 20 V | 175 °C | 2.5 V | 39 nC | 10 V | 4.5 V | 2550 pF | Surface Mount | AEC-Q101 | 4.3 mOhm | Automotive | 107 W | |
Toshiba Semiconductor and Storage | DPAK (2 Leads + Tab) SC-63 TO-252-3 | MOSFET (Metal Oxide) | 65 A | 40 V | DPAK+ | N-Channel | 20 V | 175 °C | 2.5 V | 39 nC | 2550 pF | Surface Mount | 4.3 mOhm | 107 W | 10 V |