IR2233J

Obsolete

Infineon Technologies

IC GATE DRVR HALF-BRIDGE 44PLCC

Search across all available documentation for this part.

Obsolete

Infineon Technologies

IC GATE DRVR HALF-BRIDGE 44PLCC

Technical Specifications

Parameters and characteristics for this part

Specification	IR2233J

Channel Type	3-Phase
Current - Peak Output (Source, Sink) [custom]	500 mA
Current - Peak Output (Source, Sink) [custom]	250 mA
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]	1200 V
Input Type	Inverting
Logic Voltage - VIL, VIH	0.8 V, 2 V
Mounting Type	Surface Mount
Number of Drivers	6
Operating Temperature	125 ¯C
Package / Case	32 Leads
Package / Case	44-LCC (J-Lead)
Supplier Device Package	44-PLCC, 32 Leads (16.58x16.58)
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	10 VDC

Part	Package / Case	Package / Case [x]	Package / Case [y]	Operating Temperature	Gate Type	Mounting Type	Driven Configuration	Number of Drivers	High Side Voltage - Max (Bootstrap) [Max]	Input Type	Logic Voltage - VIL, VIH	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Supplier Device Package	Channel Type	Voltage - Supply [Max]	Voltage - Supply [Min]	Package / Case	Package / Case
Infineon Technologies IR2233S	28-SOIC	0.295 in	7.5 mm	125 ¯C	IGBT N-Channel MOSFET	Surface Mount	Half-Bridge	6	1200 V	Inverting	0.8 V 2 V	500 mA	250 mA	28-SOIC	3-Phase	20 V	10 VDC
Infineon Technologies IR2233PBF	28-DIP			125 ¯C	IGBT N-Channel MOSFET	Through Hole	Half-Bridge	6	1200 V	Inverting	0.8 V 2 V	500 mA	250 mA	28-PDIP	3-Phase	20 V	10 VDC	0.6 in	15.24 mm
Infineon Technologies IR2233	28-DIP			125 ¯C	IGBT N-Channel MOSFET	Through Hole	Half-Bridge	6	1200 V	Inverting	0.8 V 2 V	500 mA	250 mA	28-PDIP	3-Phase	20 V	10 VDC	0.6 in	15.24 mm
Infineon Technologies IR2233J	44-LCC (J-Lead)			125 ¯C	IGBT N-Channel MOSFET	Surface Mount	Half-Bridge	6	1200 V	Inverting	0.8 V 2 V	500 mA	250 mA	44-PLCC 32 Leads (16.58x16.58)	3-Phase	20 V	10 VDC	32 Leads
Infineon Technologies IR2233PBF	28-DIP			125 ¯C	IGBT N-Channel MOSFET	Through Hole	Half-Bridge	6	1.2 V	Inverting	0.8 V 2 V	500 mA	250 mA	28-DIP	3-Phase	20 V	10 VDC	0.6 in	15.24 mm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Half-Bridge Gate Driver IC Inverting 44-PLCC, 32 Leads (16.58x16.58)

Technical documentation and resources

No documents available