IC GATE DRVR HALF-BRIDGE 28SOIC
| Part | Package / Case | Package / Case [x] | Package / Case [y] | Operating Temperature | Gate Type | Mounting Type | Driven Configuration | Number of Drivers | High Side Voltage - Max (Bootstrap) [Max] | Input Type | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) [custom] | Current - Peak Output (Source, Sink) [custom] | Supplier Device Package | Channel Type | Voltage - Supply [Max] | Voltage - Supply [Min] | Package / Case | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 28-SOIC | 0.295 in | 7.5 mm | 125 ¯C | IGBT N-Channel MOSFET | Surface Mount | Half-Bridge | 6 | 1200 V | Inverting | 0.8 V 2 V | 500 mA | 250 mA | 28-SOIC | 3-Phase | 20 V | 10 VDC | ||
Infineon Technologies | 28-DIP | 125 ¯C | IGBT N-Channel MOSFET | Through Hole | Half-Bridge | 6 | 1200 V | Inverting | 0.8 V 2 V | 500 mA | 250 mA | 28-PDIP | 3-Phase | 20 V | 10 VDC | 0.6 in | 15.24 mm | ||
Infineon Technologies | 28-DIP | 125 ¯C | IGBT N-Channel MOSFET | Through Hole | Half-Bridge | 6 | 1200 V | Inverting | 0.8 V 2 V | 500 mA | 250 mA | 28-PDIP | 3-Phase | 20 V | 10 VDC | 0.6 in | 15.24 mm | ||
Infineon Technologies | 44-LCC (J-Lead) | 125 ¯C | IGBT N-Channel MOSFET | Surface Mount | Half-Bridge | 6 | 1200 V | Inverting | 0.8 V 2 V | 500 mA | 250 mA | 44-PLCC 32 Leads (16.58x16.58) | 3-Phase | 20 V | 10 VDC | 32 Leads | |||
Infineon Technologies | 28-DIP | 125 ¯C | IGBT N-Channel MOSFET | Through Hole | Half-Bridge | 6 | 1.2 V | Inverting | 0.8 V 2 V | 500 mA | 250 mA | 28-DIP | 3-Phase | 20 V | 10 VDC | 0.6 in | 15.24 mm |