GT40QR21(STA1,E,D

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Toshiba Semiconductor and Storage

IGBT 1200V 40A TO3P

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Toshiba Semiconductor and Storage

IGBT 1200V 40A TO3P

Technical Specifications

Parameters and characteristics for this part

Specification	GT40QR21(STA1,E,D

Current - Collector (Ic) (Max) [Max]	40 A
Current - Collector Pulsed (Icm)	80 A
Mounting Type	Through Hole
Operating Temperature	175 °C
Package / Case	SC-65-3, TO-3P-3
Power - Max [Max]	230 W
Reverse Recovery Time (trr)	600 ns
Supplier Device Package	TO-3P(N)
Switching Energy	290 µJ
Switching Energy	-
Test Condition	40 A, 10 Ohm, 20 V, 280 V
Vce(on) (Max) @ Vge, Ic	2.7 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce(on) (Max) @ Vge, Ic	Reverse Recovery Time (trr)	Mounting Type	Operating Temperature	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Switching Energy	Switching Energy	Power - Max [Max]	Current - Collector Pulsed (Icm)	Package / Case	Test Condition
Toshiba Semiconductor and Storage GT40QR21(STA1,E,D	1200 V	2.7 V	600 ns	Through Hole	175 °C	40 A	TO-3P(N)	290 µJ	-	230 W	80 A	SC-65-3 TO-3P-3	10 Ohm 20 V 40 A 280 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT 1200 V 40 A 230 W Through Hole TO-3P(N)

Technical documentation and resources