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IGBT 1200V 40A TO3P
| Part | Voltage - Collector Emitter Breakdown (Max) [Max] | Vce(on) (Max) @ Vge, Ic | Reverse Recovery Time (trr) | Mounting Type | Operating Temperature | Current - Collector (Ic) (Max) [Max] | Supplier Device Package | Switching Energy | Switching Energy | Power - Max [Max] | Current - Collector Pulsed (Icm) | Package / Case | Test Condition |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 1200 V | 2.7 V | 600 ns | Through Hole | 175 °C | 40 A | TO-3P(N) | 290 µJ | - | 230 W | 80 A | SC-65-3 TO-3P-3 | 10 Ohm 20 V 40 A 280 V |