MT53E768M32D2NP-046 WT:B
ObsoleteMicron Technology Inc.
IC DRAM 24GBIT 200TFBGA
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MT53E768M32D2NP-046 WT:B
ObsoleteMicron Technology Inc.
IC DRAM 24GBIT 200TFBGA
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | MT53E768M32D2NP-046 WT:B |
|---|---|
| Memory Format | DRAM |
| Memory Organization | 768 M |
| Memory Size | 24 Gbit |
MT53E768 Series
| Part | Qualification | Memory Format | Mounting Type | Memory Type | Grade | Clock Frequency | Technology | Operating Temperature [Max] | Operating Temperature [Min] | Memory Size | Supplier Device Package | Package / Case | Voltage - Supply | Memory Organization | Voltage - Supply [Min] | Voltage - Supply [Max] | Write Cycle Time - Word, Page | Memory Interface | Supplier Device Package [y] | Supplier Device Package [x] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Micron Technology Inc. | AEC-Q100 | DRAM | Surface Mount | Volatile | Automotive | 2.133 GHz | SDRAM - Mobile LPDDR4 | 105 °C | -40 °C | 24 Gbit | 200-VFBGA (10x14.5) | 200-VFBGA | 1.1 V | 768 M | ||||||
Micron Technology Inc. | AEC-Q100 | DRAM | Surface Mount | Volatile | Automotive | 2.133 GHz | SDRAM - Mobile LPDDR4 | 95 °C | -40 °C | 24 Gbit | 200-VFBGA (10x14.5) | 200-VFBGA | 1.1 V | 768 M | ||||||
Micron Technology Inc. | DRAM | SDRAM - Mobile LPDDR4 | 24 Gbit | 768 M | ||||||||||||||||
Micron Technology Inc. | AEC-Q100 | DRAM | Surface Mount | Volatile | Automotive | 1866 MHz | SDRAM - Mobile LPDDR4 | 125 °C | -40 °C | 24 Gbit | 200-VFBGA (10x14.5) | 200-VFBGA | 1.1 V | 768 M | ||||||
Micron Technology Inc. | AEC-Q100 | DRAM | Surface Mount | Volatile | Automotive | 2.133 GHz | SDRAM - Mobile LPDDR4X | 125 °C | -40 °C | 48 Gbit | 12.4x12.4 556-WFBGA | 64 768 M | 1.06 V | 1.17 V | 18 ns | Parallel | ||||
Micron Technology Inc. | DRAM | SDRAM - Mobile LPDDR4 | 48 Gbit | 64 768 M | ||||||||||||||||
Micron Technology Inc. | AEC-Q100 | DRAM | Surface Mount | Volatile | Automotive | 2.133 GHz | SDRAM - Mobile LPDDR4X | 95 °C | -40 °C | 48 Gbit | 12.4x12.4 556-WFBGA | 64 768 M | 1.06 V | 1.17 V | 18 ns | Parallel | ||||
Micron Technology Inc. | DRAM | 24 Gbit | 768 M | |||||||||||||||||
Micron Technology Inc. | DRAM | Surface Mount | Volatile | 2.133 GHz | SDRAM - Mobile LPDDR4 | 85 °C | -25 °C | 48 Gbit | 12.4x12.4 556-WFBGA | 64 768 M | 1.06 V | 1.17 V | 18 ns | LVSTL | ||||||
Micron Technology Inc. | AEC-Q100 | DRAM | Surface Mount | Volatile | Automotive | 2.133 GHz | SDRAM - Mobile LPDDR4X | 105 °C | -40 °C | 24 Gbit | 200-TFBGA | 200-TFBGA | 768 M | 1.06 V | 1.17 V | 18 ns | LVSTL | 14.5 | 10 |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
MT53E768 Series
Memory IC 24Gbit
Documents
Technical documentation and resources
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