MT53E768M64D4HJ-046 AIT:B

Obsolete

Micron Technology Inc.

IC DRAM 48GBIT PAR 556WFBGA

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MT53E768M64D4HJ-046 AIT:B

Obsolete

Micron Technology Inc.

IC DRAM 48GBIT PAR 556WFBGA

Deep-Dive with AI

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	MT53E768M64D4HJ-046 AIT:B

Clock Frequency	2.133 GHz
Grade	Automotive
Memory Format	DRAM
Memory Interface	Parallel
Memory Organization	64, 768 M
Memory Size	48 Gbit
Memory Type	Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	95 °C
Operating Temperature [Min]	-40 °C
Qualification	AEC-Q100
Supplier Device Package	12.4x12.4, 556-WFBGA
Technology	SDRAM - Mobile LPDDR4X
Voltage - Supply [Max]	1.17 V
Voltage - Supply [Min]	1.06 V
Write Cycle Time - Word, Page	18 ns

MT53E768 Series

Part	Qualification	Memory Format	Mounting Type	Memory Type	Grade	Clock Frequency	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Memory Size	Supplier Device Package	Package / Case	Voltage - Supply	Memory Organization	Voltage - Supply [Min]	Voltage - Supply [Max]	Write Cycle Time - Word, Page	Memory Interface	Supplier Device Package [y]	Supplier Device Package [x]
Micron Technology Inc. MT53E768M32D4DT-046 AAT:E	AEC-Q100	DRAM	Surface Mount	Volatile	Automotive	2.133 GHz	SDRAM - Mobile LPDDR4	105 °C	-40 °C	24 Gbit	200-VFBGA (10x14.5)	200-VFBGA	1.1 V	768 M
Micron Technology Inc. MT53E768M32D4DT-046 AIT:E TR	AEC-Q100	DRAM	Surface Mount	Volatile	Automotive	2.133 GHz	SDRAM - Mobile LPDDR4	95 °C	-40 °C	24 Gbit	200-VFBGA (10x14.5)	200-VFBGA	1.1 V	768 M
Micron Technology Inc. MT53E768M32D2NP-046 WT:B TR		DRAM					SDRAM - Mobile LPDDR4			24 Gbit				768 M
Micron Technology Inc. MT53E768M32D4DT-053 AIT:E	AEC-Q100	DRAM	Surface Mount	Volatile	Automotive	1866 MHz	SDRAM - Mobile LPDDR4	125 °C	-40 °C	24 Gbit	200-VFBGA (10x14.5)	200-VFBGA	1.1 V	768 M
Micron Technology Inc. MT53E768M64D4HJ-046 AUT:C	AEC-Q100	DRAM	Surface Mount	Volatile	Automotive	2.133 GHz	SDRAM - Mobile LPDDR4X	125 °C	-40 °C	48 Gbit	12.4x12.4 556-WFBGA			64 768 M	1.06 V	1.17 V	18 ns	Parallel
Micron Technology Inc. MT53E768M64D4HJ-046 WT:B		DRAM					SDRAM - Mobile LPDDR4			48 Gbit				64 768 M
Micron Technology Inc. MT53E768M64D4HJ-046 AIT:B	AEC-Q100	DRAM	Surface Mount	Volatile	Automotive	2.133 GHz	SDRAM - Mobile LPDDR4X	95 °C	-40 °C	48 Gbit	12.4x12.4 556-WFBGA			64 768 M	1.06 V	1.17 V	18 ns	Parallel
Micron Technology Inc. MT53E768M32D2NP-046 WT:B		DRAM								24 Gbit				768 M
Micron Technology Inc. MT53E768M64D4HJ-046 WT:C TR		DRAM	Surface Mount	Volatile		2.133 GHz	SDRAM - Mobile LPDDR4	85 °C	-25 °C	48 Gbit	12.4x12.4 556-WFBGA			64 768 M	1.06 V	1.17 V	18 ns	LVSTL
Micron Technology Inc. MT53E768M32D4DE-046 AAT:E TR	AEC-Q100	DRAM	Surface Mount	Volatile	Automotive	2.133 GHz	SDRAM - Mobile LPDDR4X	105 °C	-40 °C	24 Gbit	200-TFBGA	200-TFBGA		768 M	1.06 V	1.17 V	18 ns	LVSTL	14.5	10

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

MT53E768 Series

SDRAM - Mobile LPDDR4X Memory IC 48Gbit Parallel 2.133 GHz 3.5 ns 556-WFBGA (12.4x12.4)

Documents

Technical documentation and resources

No documents available