DMN6066SSS-13

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Diodes Inc

SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 3.7A I(D), 60V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, GREEN, PLASTIC, SOP-8

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DMN6066SSS-13

Active

Diodes Inc

SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 3.7A I(D), 60V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, GREEN, PLASTIC, SOP-8

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	DMN6066SSS-13

Current - Continuous Drain (Id) @ 25°C	3.7 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	10.3 nC
Input Capacitance (Ciss) (Max) @ Vds	502 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	1.56 W
Rds On (Max) @ Id, Vgs [Max]	66 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

DMN6066SSDQ Series

60V Dual N-Channel Enhancement Mode MOSFET

Part	Vgs(th) (Max) @ Id	Grade	FET Type	Technology	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Supplier Device Package	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Package / Case [y]	Package / Case [x]	Power Dissipation (Max)	Qualification	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Power - Max [Max]	Configuration
Diodes Inc DMN6066SSSQ-13	3 V	Automotive	N-Channel	MOSFET (Metal Oxide)	3.7 A	66 mOhm	8-SOP	Surface Mount	502 pF	10.3 nC	-55 °C	150 °C	8-SOIC	3.9 mm	0.154 in	1.56 W	AEC-Q101	4.5 V 10 V	20 V	60 V
Diodes Inc DMN6066SSS-13	3 V		N-Channel	MOSFET (Metal Oxide)	3.7 A	66 mOhm	8-SO	Surface Mount	502 pF	10.3 nC	-55 °C	150 °C	8-SOIC	3.9 mm	0.154 in	1.56 W		4.5 V 10 V	20 V	60 V
Diodes Inc DMN6066SSDQ-13	3 V	Automotive		MOSFET (Metal Oxide)	3.3 A	66 mOhm	8-SOP	Surface Mount	502 pF		-55 °C	150 °C	8-SOIC	3.9 mm	0.154 in		AEC-Q101			60 V	10.3 nC	1.25 W	2 N-Channel (Dual)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.77
		10	$ 0.67
		100	$ 0.46
		500	$ 0.39
		1000	$ 0.33
	Digi-Reel®	1	$ 0.77
		10	$ 0.67
		100	$ 0.46
		500	$ 0.39
		1000	$ 0.33
	Tape & Reel (TR)	2500	$ 0.31
		5000	$ 0.28
		7500	$ 0.27
		12500	$ 0.26

Description

General part information

DMN6066SSDQ Series

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: motor controls, backlighting, DC-DC converters, and power-management functions.

Documents

Technical documentation and resources

Datasheet

Package PDF

Package File

Recommended Soldering Techniques

Technical Document