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DMN6066SSSQ-13 - Package Image for SO-8

DMN6066SSSQ-13

Active
Diodes Inc

60V N-CHANNEL ENHANCEMENT MODE MOSFET

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DMN6066SSSQ-13 - Package Image for SO-8

DMN6066SSSQ-13

Active
Diodes Inc

60V N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN6066SSSQ-13
Current - Continuous Drain (Id) @ 25°C3.7 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]10.3 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds502 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Power Dissipation (Max)1.56 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs [Max]66 mOhm
Supplier Device Package8-SOP
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.13
10$ 0.71
100$ 0.46
500$ 0.36
1000$ 0.32
Digi-Reel® 1$ 1.13
10$ 0.71
100$ 0.46
500$ 0.36
1000$ 0.32
Tape & Reel (TR) 2500$ 0.24

Description

General part information

DMN6066SSDQ Series

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: motor controls, backlighting, DC-DC converters, and power-management functions.