TSM2307CX RFG

Taiwan Semiconductor Corporation

MOSFET, P-CH, -30V, -3A, SOT-23

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Taiwan Semiconductor Corporation

MOSFET, P-CH, -30V, -3A, SOT-23

Technical Specifications

Parameters and characteristics for this part

Specification	TSM2307CX RFG

Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	10 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	565 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	1.25 W
Rds On (Max) @ Id, Vgs	95 mOhm
Supplier Device Package	SOT-23
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs(th) (Max) @ Id	Mounting Type	Package / Case	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Supplier Device Package	FET Type	Operating Temperature	Vgs (Max)
Taiwan Semiconductor Corporation TSM2307CX RFG	3 A	95 mOhm	10 nC	4.5 V 10 V	MOSFET (Metal Oxide)	3 V	Surface Mount	SC-59 SOT-23-3 TO-236-3	30 V	565 pF	1.25 W	SOT-23	P-Channel	150 °C	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	42000	$ 0.19
Newark	Each (Supplied on Cut Tape)	1	$ 0.45
		10	$ 0.30

General part information

P-Channel 30 V 3A (Tc) 1.25W (Ta) Surface Mount SOT-23

Technical documentation and resources