Beta
⌘K
MOSFET, P-CH, -30V, -3A, SOT-23
| Part | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | Technology | Vgs(th) (Max) @ Id | Mounting Type | Package / Case | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Power Dissipation (Max) | Supplier Device Package | FET Type | Operating Temperature | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | 3 A | 95 mOhm | 10 nC | 4.5 V 10 V | MOSFET (Metal Oxide) | 3 V | Surface Mount | SC-59 SOT-23-3 TO-236-3 | 30 V | 565 pF | 1.25 W | SOT-23 | P-Channel | 150 °C | 20 V |