2N7334

Obsolete

Microsemi Corporation

MOSFET 4N-CH 100V 1A MO-036AB

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Obsolete

Microsemi Corporation

MOSFET 4N-CH 100V 1A MO-036AB

Technical Specifications

Parameters and characteristics for this part

Specification	2N7334

Configuration	4 N-Channel
Current - Continuous Drain (Id) @ 25°C	1 A
Drain to Source Voltage (Vdss)	100 V
Gate Charge (Qg) (Max) @ Vgs [Max]	60 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	14-DIP
Package / Case [x]	0.3 "
Package / Case [y]	7.62 mm
Power - Max [Max]	1.4 W
Rds On (Max) @ Id, Vgs	700 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	4 V

Part	Vgs(th) (Max) @ Id	Package / Case	Package / Case [y]	Package / Case [x]	Technology	Power - Max [Max]	Configuration	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)
Microsemi Corporation 2N7334	4 V	14-DIP	7.62 mm	0.3 "	MOSFET (Metal Oxide)	1.4 W	4 N-Channel	-55 °C	150 °C	700 mOhm	60 nC	Through Hole	1 A	100 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 100V 1A 1.4W Through Hole MO-036AB

Technical documentation and resources

No documents available