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MOSFET 4N-CH 100V 1A MO-036AB
| Part | Vgs(th) (Max) @ Id | Package / Case | Package / Case [y] | Package / Case [x] | Technology | Power - Max [Max] | Configuration | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microsemi Corporation | 4 V | 14-DIP | 7.62 mm | 0.3 " | MOSFET (Metal Oxide) | 1.4 W | 4 N-Channel | -55 °C | 150 °C | 700 mOhm | 60 nC | Through Hole | 1 A | 100 V |