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DMP6111SVT-13 - Package Image for TSOT26

DMP6111SVT-13

Active
Diodes Inc

60V P-CHANNEL ENHANCEMENT MODE MOSFET

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Search across all available documentation for this part.

DocumentsDatasheetPackage PDF+2
DMP6111SVT-13 - Package Image for TSOT26

DMP6111SVT-13

Active
Diodes Inc

60V P-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

DocumentsDatasheetPackage PDF+2

Technical Specifications

Parameters and characteristics for this part

SpecificationDMP6111SVT-13
Current - Continuous Drain (Id) @ 25°C2.7 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]23.2 nC
Input Capacitance (Ciss) (Max) @ Vds1283 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTSOT-23-6, SOT-23-6 Thin
Power Dissipation (Max)1.1 W
Rds On (Max) @ Id, Vgs115 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 10000$ 0.17
20000$ 0.16
30000$ 0.15
50000$ 0.15

Description

General part information

DMP6111SVT Series

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.