DMP6111SVT Series

60V P-Channel Enhancement Mode MOSFET

Catalog

60V P-Channel Enhancement Mode MOSFET

Part	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Vgs (Max)	FET Type	Mounting Type	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Technology	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case
Diodes Inc DMP6111SVT-7	4.5 V 10 V	60 V	20 V	P-Channel	Surface Mount	1.1 W	115 mOhm	MOSFET (Metal Oxide)	3 V	1283 pF	2.7 A	-55 °C	150 °C	23.2 nC	SOT-23-6 Thin TSOT-23-6
Diodes Inc DMP6111SVT-13	4.5 V 10 V	60 V	20 V	P-Channel	Surface Mount	1.1 W	115 mOhm	MOSFET (Metal Oxide)	3 V	1283 pF	2.7 A	-55 °C	150 °C	23.2 nC	SOT-23-6 Thin TSOT-23-6

Catalog

60V P-Channel Enhancement Mode MOSFET

Key Features

• 100% Unclamped Inductive Switch (UIS) Test in Production

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability.https://www.diodes.com/quality/product-definitions/

• An automotive-compliant part is available under separate datasheet (DMP6111SVTQ)

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.