IR2130

Obsolete

Infineon Technologies

IC GATE DRVR HALF-BRIDGE 28DIP

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IR2130

Obsolete

Infineon Technologies

IC GATE DRVR HALF-BRIDGE 28DIP

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IR2130

Channel Type	3-Phase
Current - Peak Output (Source, Sink) [custom]	500 mA
Current - Peak Output (Source, Sink) [custom]	250 mA
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Inverting
Logic Voltage - VIL, VIH [custom]	2.2 V
Logic Voltage - VIL, VIH [custom]	0.8 V
Mounting Type	Through Hole
Number of Drivers	6
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	28-DIP
Package / Case	0.6 in
Package / Case	15.24 mm
Rise / Fall Time (Typ) [custom]	80 ns
Rise / Fall Time (Typ) [custom]	35 ns
Supplier Device Package	28-PDIP
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	10 VDC

IR2130 Series

Part	Driven Configuration	High Side Voltage - Max (Bootstrap) [Max]	Package / Case	Package / Case	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Number of Drivers	Channel Type	Mounting Type	Supplier Device Package	Input Type	Gate Type	Operating Temperature [Max]	Operating Temperature [Min]	Logic Voltage - VIL, VIH [custom]	Logic Voltage - VIL, VIH [custom]	Voltage - Supply [Max]	Voltage - Supply [Min]	Package / Case [x]	Package / Case [y]	Package / Case
Infineon Technologies IR2130JPBF	Half-Bridge	600 V	32 Leads	44-LCC (J-Lead)	500 mA	250 mA	80 ns	35 ns	6	3-Phase	Surface Mount	44-PLCC 32 Leads (16.58x16.58)	Inverting	IGBT MOSFET N-Channel MOSFET	150 °C	-40 °C	2.2 V	0.8 V	20 V	10 VDC
Infineon Technologies IR2130STR	Half-Bridge	600 V		28-SOIC	500 mA	250 mA	80 ns	35 ns	6	3-Phase	Surface Mount	28-SOIC	Inverting	IGBT N-Channel MOSFET	150 °C	-40 °C	2.2 V	0.8 V	20 V	10 VDC	0.295 in	7.5 mm
Infineon Technologies IR2130	Half-Bridge	600 V	0.6 in	28-DIP	500 mA	250 mA	80 ns	35 ns	6	3-Phase	Through Hole	28-PDIP	Inverting	IGBT N-Channel MOSFET	150 °C	-40 °C	2.2 V	0.8 V	20 V	10 VDC			15.24 mm
Infineon Technologies IR2130SPBF	Half-Bridge	600 V		28-SOIC	500 mA	250 mA	80 ns	35 ns	6	3-Phase	Surface Mount	28-SOIC	Inverting	IGBT N-Channel MOSFET	150 °C	-40 °C	2.2 V	0.8 V	20 V	10 VDC	0.295 in	7.5 mm
Infineon Technologies IR2130JPBF
Infineon Technologies IR2130JTR	Half-Bridge	600 V	32 Leads	44-LCC (J-Lead)	500 mA	250 mA	80 ns	35 ns	6	3-Phase	Surface Mount	44-PLCC 32 Leads (16.58x16.58)	Inverting	IGBT N-Channel MOSFET	150 °C	-40 °C	2.2 V	0.8 V	20 V	10 VDC
Infineon Technologies IR2130PBF	Half-Bridge	600 V	0.6 in	28-DIP	500 mA	250 mA	80 ns	35 ns	6	3-Phase	Through Hole	28-PDIP	Inverting	IGBT N-Channel MOSFET	150 °C	-40 °C	2.2 V	0.8 V	20 V	10 VDC			15.24 mm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

IR2130 Series

Half-Bridge Gate Driver IC Inverting 28-PDIP

Documents

Technical documentation and resources