IC GATE DRVR HALF-BRIDGE 44PLCC
| Part | Driven Configuration | High Side Voltage - Max (Bootstrap) [Max] | Package / Case | Package / Case | Current - Peak Output (Source, Sink) [custom] | Current - Peak Output (Source, Sink) [custom] | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Number of Drivers | Channel Type | Mounting Type | Supplier Device Package | Input Type | Gate Type | Operating Temperature [Max] | Operating Temperature [Min] | Logic Voltage - VIL, VIH [custom] | Logic Voltage - VIL, VIH [custom] | Voltage - Supply [Max] | Voltage - Supply [Min] | Package / Case [x] | Package / Case [y] | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | Half-Bridge | 600 V | 32 Leads | 44-LCC (J-Lead) | 500 mA | 250 mA | 80 ns | 35 ns | 6 | 3-Phase | Surface Mount | 44-PLCC 32 Leads (16.58x16.58) | Inverting | IGBT MOSFET N-Channel MOSFET | 150 °C | -40 °C | 2.2 V | 0.8 V | 20 V | 10 VDC | |||
Infineon Technologies | Half-Bridge | 600 V | 28-SOIC | 500 mA | 250 mA | 80 ns | 35 ns | 6 | 3-Phase | Surface Mount | 28-SOIC | Inverting | IGBT N-Channel MOSFET | 150 °C | -40 °C | 2.2 V | 0.8 V | 20 V | 10 VDC | 0.295 in | 7.5 mm | ||
Infineon Technologies | Half-Bridge | 600 V | 0.6 in | 28-DIP | 500 mA | 250 mA | 80 ns | 35 ns | 6 | 3-Phase | Through Hole | 28-PDIP | Inverting | IGBT N-Channel MOSFET | 150 °C | -40 °C | 2.2 V | 0.8 V | 20 V | 10 VDC | 15.24 mm | ||
Infineon Technologies | Half-Bridge | 600 V | 28-SOIC | 500 mA | 250 mA | 80 ns | 35 ns | 6 | 3-Phase | Surface Mount | 28-SOIC | Inverting | IGBT N-Channel MOSFET | 150 °C | -40 °C | 2.2 V | 0.8 V | 20 V | 10 VDC | 0.295 in | 7.5 mm | ||
Infineon Technologies | |||||||||||||||||||||||
Infineon Technologies | Half-Bridge | 600 V | 32 Leads | 44-LCC (J-Lead) | 500 mA | 250 mA | 80 ns | 35 ns | 6 | 3-Phase | Surface Mount | 44-PLCC 32 Leads (16.58x16.58) | Inverting | IGBT N-Channel MOSFET | 150 °C | -40 °C | 2.2 V | 0.8 V | 20 V | 10 VDC | |||
Infineon Technologies | Half-Bridge | 600 V | 0.6 in | 28-DIP | 500 mA | 250 mA | 80 ns | 35 ns | 6 | 3-Phase | Through Hole | 28-PDIP | Inverting | IGBT N-Channel MOSFET | 150 °C | -40 °C | 2.2 V | 0.8 V | 20 V | 10 VDC | 15.24 mm |