W947D2HKZ-6G TR

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Winbond Electronics

IC DRAM 128MBIT PAR 90VFBGA

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Winbond Electronics

IC DRAM 128MBIT PAR 90VFBGA

Technical Specifications

Parameters and characteristics commom to parts in this series

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

IC DRAM 128MBIT LVCMOS 90VFBGA

Part	Technology	Voltage - Supply [Max]	Voltage - Supply [Min]	Access Time	Clock Frequency	Memory Format	Supplier Device Package	Package / Case	Write Cycle Time - Word, Page	Memory Organization	Mounting Type	Memory Size	Memory Type	Memory Interface	Operating Temperature [Min]	Operating Temperature [Max]
Winbond Electronics W947D2HBJX6E TR	SDRAM - Mobile LPDDR	1.95 V	1.7 V	5 ns	166 MHz	DRAM	90-VFBGA (8x13)	90-TFBGA	15 ns	4M x 32	Surface Mount	128 Mb	Volatile	LVCMOS	-25 °C	85 °C
Winbond Electronics W947D2HBJX5I TR	SDRAM - Mobile LPDDR	1.95 V	1.7 V	5 ns	200 MHz	DRAM	90-VFBGA (8x13)	90-TFBGA	15 ns	4M x 32	Surface Mount	128 Mb	Volatile	LVCMOS	-40 °C	85 °C
Winbond Electronics W947D2HBJX6E	SDRAM - Mobile LPDDR	1.95 V	1.7 V	5 ns	166 MHz	DRAM	90-VFBGA (8x13)	90-TFBGA	15 ns	4M x 32	Surface Mount	128 Mb	Volatile	LVCMOS	-25 °C	85 °C
Winbond Electronics W947D2HKZ-5J TR	SDRAM - Mobile LPDDR					DRAM				4M x 32		128 Mb		Parallel
Winbond Electronics W947D2HKZ-5J	SDRAM - Mobile LPDDR					DRAM				4M x 32		128 Mb		Parallel
Winbond Electronics W947D2HKZ-6G TR	SDRAM - Mobile LPDDR					DRAM				4M x 32		128 Mb		Parallel
Winbond Electronics W947D2HBJX5E	SDRAM - Mobile LPDDR	1.95 V	1.7 V	5 ns	200 MHz	DRAM	90-VFBGA (8x13)	90-TFBGA	15 ns	4M x 32	Surface Mount	128 Mb	Volatile	LVCMOS	-25 °C	85 °C
Winbond Electronics W947D2HKZ-6G	SDRAM - Mobile LPDDR					DRAM				4M x 32		128 Mb		Parallel

General part information

SDRAM - Mobile LPDDR Memory IC 128Mbit Parallel

Technical documentation and resources

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