IC DRAM 128MBIT LVCMOS 90VFBGA
Part | Technology | Voltage - Supply [Max] | Voltage - Supply [Min] | Access Time | Clock Frequency | Memory Format | Supplier Device Package | Package / Case | Write Cycle Time - Word, Page | Memory Organization | Mounting Type | Memory Size | Memory Type | Memory Interface | Operating Temperature [Min] | Operating Temperature [Max] |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Winbond Electronics W947D2HBJX6E TR | SDRAM - Mobile LPDDR | 1.95 V | 1.7 V | 5 ns | 166 MHz | DRAM | 90-VFBGA (8x13) | 90-TFBGA | 15 ns | 4M x 32 | Surface Mount | 128 Mb | Volatile | LVCMOS | -25 °C | 85 °C |
Winbond Electronics W947D2HBJX5I TR | SDRAM - Mobile LPDDR | 1.95 V | 1.7 V | 5 ns | 200 MHz | DRAM | 90-VFBGA (8x13) | 90-TFBGA | 15 ns | 4M x 32 | Surface Mount | 128 Mb | Volatile | LVCMOS | -40 °C | 85 °C |
Winbond Electronics W947D2HBJX6E | SDRAM - Mobile LPDDR | 1.95 V | 1.7 V | 5 ns | 166 MHz | DRAM | 90-VFBGA (8x13) | 90-TFBGA | 15 ns | 4M x 32 | Surface Mount | 128 Mb | Volatile | LVCMOS | -25 °C | 85 °C |
Winbond Electronics W947D2HKZ-5J TR | SDRAM - Mobile LPDDR | DRAM | 4M x 32 | 128 Mb | Parallel | |||||||||||
Winbond Electronics W947D2HKZ-5J | SDRAM - Mobile LPDDR | DRAM | 4M x 32 | 128 Mb | Parallel | |||||||||||
Winbond Electronics W947D2HKZ-6G TR | SDRAM - Mobile LPDDR | DRAM | 4M x 32 | 128 Mb | Parallel | |||||||||||
Winbond Electronics W947D2HBJX5E | SDRAM - Mobile LPDDR | 1.95 V | 1.7 V | 5 ns | 200 MHz | DRAM | 90-VFBGA (8x13) | 90-TFBGA | 15 ns | 4M x 32 | Surface Mount | 128 Mb | Volatile | LVCMOS | -25 °C | 85 °C |
Winbond Electronics W947D2HKZ-6G | SDRAM - Mobile LPDDR | DRAM | 4M x 32 | 128 Mb | Parallel |