SSM6K411TU(TE85L,F

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Toshiba Semiconductor and Storage

MOSFET N-CH 20V 10A UF6

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Toshiba Semiconductor and Storage

MOSFET N-CH 20V 10A UF6

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6K411TU(TE85L,F

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	9.4 nC
Input Capacitance (Ciss) (Max) @ Vds	710 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-SMD, Flat Leads
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	12 mOhm
Supplier Device Package	UF6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.2 V

Part	Supplier Device Package	Rds On (Max) @ Id, Vgs	Package / Case	Vgs (Max)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Technology	Current - Continuous Drain (Id) @ 25°C	FET Type	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature
Toshiba Semiconductor and Storage SSM6K411TU(TE85L,F	UF6	12 mOhm	6-SMD Flat Leads	12 V	1 W	2.5 V 4.5 V	1.2 V	MOSFET (Metal Oxide)	10 A	N-Channel	Surface Mount	710 pF	20 V	9.4 nC	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 20 V 10A (Ta) 1W (Ta) Surface Mount UF6

Technical documentation and resources

No documents available