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MOSFET N-CH 20V 10A UF6
| Part | Supplier Device Package | Rds On (Max) @ Id, Vgs | Package / Case | Vgs (Max) | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Technology | Current - Continuous Drain (Id) @ 25°C | FET Type | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | UF6 | 12 mOhm | 6-SMD Flat Leads | 12 V | 1 W | 2.5 V 4.5 V | 1.2 V | MOSFET (Metal Oxide) | 10 A | N-Channel | Surface Mount | 710 pF | 20 V | 9.4 nC | 150 °C |