DMPH1006UPSQ-13

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Diodes Inc

TRANS MOSFET P-CH 12V 80A AUTOMOTIVE AEC-Q101 8-PIN POWERDI EP T/R

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Active

Diodes Inc

TRANS MOSFET P-CH 12V 80A AUTOMOTIVE AEC-Q101 8-PIN POWERDI EP T/R

Technical Specifications

Parameters and characteristics for this part

Specification	DMPH1006UPSQ-13

Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	124 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	6334 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max) [Max]	3.2 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	6 mOhm
Supplier Device Package	PowerDI5060-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

12V 175°C P-Channel Enhancement Mode MOSFET

Part	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Qualification	FET Type	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Mounting Type	Supplier Device Package	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Grade	Technology	Drain to Source Voltage (Vdss)
Diodes Inc DMPH1006UPSQ-13	2.5 V 4.5 V	8 V	6334 pF	AEC-Q101	P-Channel	1 V	6 mOhm	Surface Mount	PowerDI5060-8	8-PowerTDFN	124 nC	3.2 W	-55 °C	175 ░C	Automotive	MOSFET (Metal Oxide)	12 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101 and supported by a PPAP.