DMPH1006UPSQ Series

12V 175°C P-Channel Enhancement Mode MOSFET

Catalog

12V 175°C P-Channel Enhancement Mode MOSFET

Part	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Qualification	FET Type	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Mounting Type	Supplier Device Package	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Grade	Technology	Drain to Source Voltage (Vdss)
Diodes Inc DMPH1006UPSQ-13	2.5 V 4.5 V	8 V	6334 pF	AEC-Q101	P-Channel	1 V	6 mOhm	Surface Mount	PowerDI5060-8	8-PowerTDFN	124 nC	3.2 W	-55 °C	175 ░C	Automotive	MOSFET (Metal Oxide)	12 V

12V 175°C P-Channel Enhancement Mode MOSFET

• Rated to +175°C – Ideal for High Ambient Temperature Environments

• 100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application

• High Conversion Efficiency

• Low RDS(ON)– Minimizes On-State Losses

• Low Input Capacitance

• Fast Switching Speed

This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101 and supported by a PPAP.