GD25D80CKIGR

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GigaDevice Semiconductor (HK) Limited

IC FLASH 8MBIT SPI/DUAL 8USON

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GD25D80CKIGR

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GigaDevice Semiconductor (HK) Limited

IC FLASH 8MBIT SPI/DUAL 8USON

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DocumentsDatasheet Product Selection Guide 2023

Specifications Pricing Series Description Documents

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.38
		10	$ 0.38
		25	$ 0.35
		50	$ 0.35
		100	$ 0.31
		250	$ 0.30
		500	$ 0.30
	Digi-Reel®	1	$ 0.38
		10	$ 0.38
		25	$ 0.35
		50	$ 0.35
		100	$ 0.31
		250	$ 0.30
		500	$ 0.30
	Tape & Reel (TR)	3000	$ 0.40
		6000	$ 0.38
		9000	$ 0.37
		15000	$ 0.36
		21000	$ 0.36

Description

General part information

GD25D80 Series

FLASH - NOR Memory IC 8Mbit SPI - Dual I/O 100 MHz 8-USON (1.5x1.5)

Documents

Technical documentation and resources

Datasheet

Product Selection Guide 2023

Datasheet

Specification	GD25D80CKIGR	GD25D80 Series

Access Time	-	6 ns
Clock Frequency	100 MHz	100 - 104 MHz
Memory Format	FLASH	FLASH
Memory Interface	SPI - Dual I/O	SPI - Dual I/O
Memory Organization [custom]	1 M	1 M
Memory Organization [custom]	8 bits	8 bits
Memory Size	1024 KB	1024 KB
Memory Type	Non-Volatile	Non-Volatile
Mounting Type	Surface Mount	Surface Mount
Operating Temperature [Max]	85 °C	85 °C
Operating Temperature [Min]	-40 °C	-40 °C
Package / Case	8-XFDFN Exposed Pad	8-SOIC, 8-XFDFN Exposed Pad
Package / Case	-	3.9 - 5.3 mm
Package / Case	-	0.154 - 0.209 "
Supplier Device Package	8-USON (1.5x1.5)	8-SOP, 8-USON (1.5x1.5), 8-USON (3x2)
Technology	FLASH - NOR	FLASH - NOR (SLC), FLASH - NOR
Voltage - Supply [Max]	3.6 V	3.6 V
Voltage - Supply [Min]	2.7 V	2.7 V
Write Cycle Time - Word, Page [custom]	4 ms	4 ms
Write Cycle Time - Word, Page [custom]	50 µs	50 µs

Part	Memory Interface	Memory Size	Memory Organization [custom]	Memory Organization [custom]	Technology	Clock Frequency	Memory Format	Memory Type	Access Time	Supplier Device Package	Write Cycle Time - Word, Page [custom]	Write Cycle Time - Word, Page [custom]	Package / Case [y]	Package / Case	Package / Case [x]	Mounting Type	Voltage - Supply [Min]	Voltage - Supply [Max]	Operating Temperature [Max]	Operating Temperature [Min]
GigaDevice Semiconductor (HK) Limited GD25D80ESIGR	SPI - Dual I/O	1024 KB	1 M	8 bits	FLASH - NOR (SLC)	104 MHz	FLASH
GigaDevice Semiconductor (HK) Limited GD25D80CSIGR	SPI - Dual I/O	1024 KB	1 M	8 bits	FLASH - NOR (SLC)	100 MHz	FLASH	Non-Volatile	6 ns	8-SOP	4 ms	50 µs	5.3 mm	8-SOIC	0.209 "	Surface Mount	2.7 V	3.6 V	85 °C	-40 °C
GigaDevice Semiconductor (HK) Limited GD25D80CKIGR	SPI - Dual I/O	1024 KB	1 M	8 bits	FLASH - NOR	100 MHz	FLASH	Non-Volatile		8-USON (1.5x1.5)	4 ms	50 µs		8-XFDFN Exposed Pad		Surface Mount	2.7 V	3.6 V	85 °C	-40 °C
GigaDevice Semiconductor (HK) Limited GD25D80CTIGR	SPI - Dual I/O	1024 KB	1 M	8 bits	FLASH - NOR (SLC)	100 MHz	FLASH	Non-Volatile	6 ns	8-SOP	4 ms	50 µs	3.9 mm	8-SOIC	0.154 in	Surface Mount	2.7 V	3.6 V	85 °C	-40 °C
GigaDevice Semiconductor (HK) Limited GD25D80EEIGR	SPI - Dual I/O	1024 KB	1 M	8 bits	FLASH - NOR (SLC)	104 MHz	FLASH	Non-Volatile	6 ns	8-USON (3x2)	4 ms	50 µs		8-XFDFN Exposed Pad		Surface Mount	2.7 V	3.6 V	85 °C	-40 °C
GigaDevice Semiconductor (HK) Limited GD25D80CEIGR	SPI - Dual I/O	1024 KB	1 M	8 bits	FLASH - NOR (SLC)	100 MHz	FLASH	Non-Volatile	6 ns	8-USON (3x2)	4 ms	50 µs		8-XFDFN Exposed Pad		Surface Mount	2.7 V	3.6 V	85 °C	-40 °C
GigaDevice Semiconductor (HK) Limited GD25D80EKIGR	SPI - Dual I/O	1024 KB	1 M	8 bits	FLASH - NOR (SLC)	104 MHz	FLASH	Non-Volatile	6 ns	8-USON (1.5x1.5)	4 ms	50 µs		8-XFDFN Exposed Pad		Surface Mount	2.7 V	3.6 V	85 °C	-40 °C

GD25D80CKIGR

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GD25D80CKIGR

Deep-Dive with AI

Pricing

Description

GD25D80 Series

Documents

Datasheet

Product Selection Guide 2023

Technical Specifications

GD25D80 Series