GD25D80 Series

Manufacturer: GigaDevice Semiconductor (HK) Limited

Catalog

IC FLASH 8MBIT SPI/DUAL

Part	Memory Interface	Memory Size	Memory Organization [custom]	Memory Organization [custom]	Technology	Clock Frequency	Memory Format	Memory Type	Access Time	Supplier Device Package	Write Cycle Time - Word, Page [custom]	Write Cycle Time - Word, Page [custom]	Package / Case [y]	Package / Case	Package / Case [x]	Mounting Type	Voltage - Supply [Min]	Voltage - Supply [Max]	Operating Temperature [Max]	Operating Temperature [Min]
GigaDevice Semiconductor (HK) Limited GD25D80ESIGR	SPI - Dual I/O	1024 KB	1 M	8 bits	FLASH - NOR (SLC)	104 MHz	FLASH
GigaDevice Semiconductor (HK) Limited GD25D80CSIGR	SPI - Dual I/O	1024 KB	1 M	8 bits	FLASH - NOR (SLC)	100 MHz	FLASH	Non-Volatile	6 ns	8-SOP	4 ms	50 µs	5.3 mm	8-SOIC	0.209 "	Surface Mount	2.7 V	3.6 V	85 °C	-40 °C
GigaDevice Semiconductor (HK) Limited GD25D80CKIGR	SPI - Dual I/O	1024 KB	1 M	8 bits	FLASH - NOR	100 MHz	FLASH	Non-Volatile		8-USON (1.5x1.5)	4 ms	50 µs		8-XFDFN Exposed Pad		Surface Mount	2.7 V	3.6 V	85 °C	-40 °C
GigaDevice Semiconductor (HK) Limited GD25D80CTIGR	SPI - Dual I/O	1024 KB	1 M	8 bits	FLASH - NOR (SLC)	100 MHz	FLASH	Non-Volatile	6 ns	8-SOP	4 ms	50 µs	3.9 mm	8-SOIC	0.154 in	Surface Mount	2.7 V	3.6 V	85 °C	-40 °C
GigaDevice Semiconductor (HK) Limited GD25D80EEIGR	SPI - Dual I/O	1024 KB	1 M	8 bits	FLASH - NOR (SLC)	104 MHz	FLASH	Non-Volatile	6 ns	8-USON (3x2)	4 ms	50 µs		8-XFDFN Exposed Pad		Surface Mount	2.7 V	3.6 V	85 °C	-40 °C
GigaDevice Semiconductor (HK) Limited GD25D80CEIGR	SPI - Dual I/O	1024 KB	1 M	8 bits	FLASH - NOR (SLC)	100 MHz	FLASH	Non-Volatile	6 ns	8-USON (3x2)	4 ms	50 µs		8-XFDFN Exposed Pad		Surface Mount	2.7 V	3.6 V	85 °C	-40 °C
GigaDevice Semiconductor (HK) Limited GD25D80EKIGR	SPI - Dual I/O	1024 KB	1 M	8 bits	FLASH - NOR (SLC)	104 MHz	FLASH	Non-Volatile	6 ns	8-USON (1.5x1.5)	4 ms	50 µs		8-XFDFN Exposed Pad		Surface Mount	2.7 V	3.6 V	85 °C	-40 °C