UCC27324DR

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Texas Instruments

NON-INVERTING 4-A/4-A DUAL-CHANNEL LOW SIDE GATE DRIVER

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UCC27324DR

Active

Texas Instruments

NON-INVERTING 4-A/4-A DUAL-CHANNEL LOW SIDE GATE DRIVER

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Description Specifications Series Pricing CAD Documents

Description

General part information

UCC27324 Series

The UCC27324-Q1 high-speed dual-MOSFET driver can deliver large peak currents into capacitive loads. Using a design that inherently minimizes shoot-through current, these drivers deliver 4 A of current where it is needed most, at the Miller plateau region during the MOSFET switching transition. A unique bipolar and MOSFET hybrid output stage in parallel also allows efficient current sourcing and sinking at low supply voltages.

The device is offered in a standard SOIC-8 (D) package.

Technical Specifications

Parameters and characteristics for this part

Specification	UCC27324DR

Channel Type	Independent
Current - Peak Output (Sink)	4 A
Current - Peak Output (Source)	4 A
Driven Configuration	Low-Side
Fall Time (Typ)	15 ns
Gate Channel	N-Channel, P-Channel
Gate Type	MOSFET, N-Channel, P-Channel MOSFET
Input Type	Non-Inverting
Logic Voltage - VIH	2 V
Logic Voltage - VIL	1 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature (Max)	125 °C
Operating Temperature (Min)	-40 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Rise Time (Typ)	20 ns
Voltage - Supply (Maximum)	15 V
Voltage - Supply (Minimum)	4.5 V

UCC27324 Series

Non-inverting 4-A/4-A dual-channel low side gate driver

Part	Mounting Type	Number of Drivers	Channel Type	Voltage - Supply (Maximum)	Voltage - Supply (Minimum)	Operating Temperature (Max)	Operating Temperature (Min)	Rise Time (Typ)	Fall Time (Typ)	Logic Voltage - VIH	Logic Voltage - VIL	Current - Peak Output (Source)	Current - Peak Output (Sink)	Gate Type	Gate Channel	Input Type	Driven Configuration	Package Name	Package Length	Package Width	Package Features	Grade	Qualification
Texas Instruments UCC27324DR	Surface Mount	2	Independent	15 V	4.5 V	125 °C	-40 °C	20 ns	15 ns	2 V	1 V	4 A	4 A	MOSFET N-Channel P-Channel MOSFET	N-Channel P-Channel	Non-Inverting	Low-Side	8-SOIC	0.154 in	3.9 mm
Texas Instruments UCC27324P	Through Hole	2	Independent	15 V	4.5 V	125 °C	-40 °C	20 ns	15 ns	2 V	1 V	4 A	4 A	MOSFET N-Channel P-Channel MOSFET	N-Channel P-Channel	Non-Inverting	Low-Side	8-DIP 8-PDIP	0.3 in	7.62 mm
Texas Instruments UCC27324DGNRG4	Surface Mount	2	Independent	15 V	4.5 V	125 °C	-40 °C	20 ns	15 ns	2 V	1 V	4 A	4 A	MOSFET N-Channel P-Channel MOSFET	N-Channel P-Channel	Non-Inverting	Low-Side	8-HVSSOP 8-MSOP 8-TSSOP	0.118 in	3 mm	Exposed Pad
Texas Instruments UCC27324QDRQ1	Surface Mount	2	Independent	15 V	4 V	125 °C	-40 °C	20 ns	15 ns	2 V	1 V	4 A	4 A	MOSFET N-Channel P-Channel MOSFET	N-Channel P-Channel	Non-Inverting	Low-Side	8-SOIC	0.154 in	3.9 mm		Automotive	AEC-Q100
Texas Instruments UCC27324PG4	Through Hole	2	Independent	15 V	4.5 V	125 °C	-40 °C	20 ns	15 ns	2 V	1 V	4 A	4 A	MOSFET N-Channel P-Channel MOSFET	N-Channel P-Channel	Non-Inverting	Low-Side	8-DIP 8-PDIP	0.3 in	7.62 mm
Texas Instruments UCC27324D	Surface Mount	2	Independent	15 V	4.5 V	125 °C	-40 °C	20 ns	15 ns	2 V	1 V	4 A	4 A	MOSFET N-Channel P-Channel MOSFET	N-Channel P-Channel	Non-Inverting	Low-Side	8-SOIC	0.154 in	3.9 mm
Texas Instruments UCC27324DGNR	Surface Mount	2	Independent	15 V	4.5 V	125 °C	-40 °C	20 ns	15 ns	2 V	1 V	4 A	4 A	MOSFET N-Channel P-Channel MOSFET	N-Channel P-Channel	Non-Inverting	Low-Side	8-HVSSOP 8-MSOP 8-TSSOP	0.118 in	3 mm	Exposed Pad
Texas Instruments UCC27324DGN	Surface Mount	2	Independent	15 V	4.5 V	125 °C	-40 °C	20 ns	15 ns	2 V	1 V	4 A	4 A	MOSFET N-Channel P-Channel MOSFET	N-Channel P-Channel	Non-Inverting	Low-Side	8-HVSSOP 8-MSOP 8-TSSOP	0.118 in	3 mm	Exposed Pad
Texas Instruments UCC27324DG4	Surface Mount	2	Independent	15 V	4.5 V	125 °C	-40 °C	20 ns	15 ns	2 V	1 V	4 A	4 A	MOSFET N-Channel P-Channel MOSFET	N-Channel P-Channel	Non-Inverting	Low-Side	8-SOIC	0.154 in	3.9 mm
Texas Instruments UCC27324DRG4	Surface Mount	2	Independent	15 V	4.5 V	125 °C	-40 °C	20 ns	15 ns	2 V	1 V	4 A	4 A	MOSFET N-Channel P-Channel MOSFET	N-Channel P-Channel	Non-Inverting	Low-Side	8-SOIC	0.154 in	3.9 mm