IDW32G65C5BXKSA2

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Infineon Technologies

SILICON CARBIDE SCHOTTKY DIODE, THINQ GEN V SERIES, DUAL COMMON CATHODE, 650 V, 16 A, 23 NC

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IDW32G65C5BXKSA2

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Infineon Technologies

SILICON CARBIDE SCHOTTKY DIODE, THINQ GEN V SERIES, DUAL COMMON CATHODE, 650 V, 16 A, 23 NC

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IDW32G65C5BXKSA2

Capacitance @ Vr, F	470 pF
Current - Average Rectified (Io)	16 A
Current - Reverse Leakage @ Vr	200 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-247-3
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	PG-TO247-3
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

IDW32G65 Series

Part	Capacitance @ Vr, F	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Package / Case	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Technology	Mounting Type	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]
Infineon Technologies IDW32G65C5BXKSA2	470 pF	1.7 V	0 ns	TO-247-3	No Recovery Time	175 ░C	-55 C	PG-TO247-3	SiC (Silicon Carbide) Schottky	Through Hole	200 µA	16 A	650 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 12.14
		10	$ 10.69
		240	$ 8.96
		720	$ 8.38
		1200	$ 7.69
Newark	Each	1	$ 11.74
		10	$ 10.54
		25	$ 10.28
		50	$ 7.33
		100	$ 6.70
		480	$ 6.53
		720	$ 6.35

Description

General part information

IDW32G65 Series

CoolSiC™ generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thinwafer technology, the family of products shows improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qcx Vf).The CoolSiC™ Generation 5 has been designed to complement our 650V CoolMOS™ families: this ensures meeting the most stringent application requirements in this voltage range.

Documents

Technical documentation and resources