Beta
⌘K
SILICON CARBIDE SCHOTTKY DIODE, THINQ GEN V SERIES, DUAL COMMON CATHODE, 650 V, 16 A, 23 NC
| Part | Capacitance @ Vr, F | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Package / Case | Speed | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Supplier Device Package | Technology | Mounting Type | Current - Reverse Leakage @ Vr | Current - Average Rectified (Io) | Voltage - DC Reverse (Vr) (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 470 pF | 1.7 V | 0 ns | TO-247-3 | No Recovery Time | 175 ░C | -55 C | PG-TO247-3 | SiC (Silicon Carbide) Schottky | Through Hole | 200 µA | 16 A | 650 V |