IMW65R020M2HXKSA1

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Infineon Technologies

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 83 A, 650 V, 0.018 OHM, TO-247

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IMW65R020M2HXKSA1

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Infineon Technologies

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 83 A, 650 V, 0.018 OHM, TO-247

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IMW65R020M2HXKSA1

Current - Continuous Drain (Id) @ 25°C	83 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	15 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	20 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	57 nC
Input Capacitance (Ciss) (Max) @ Vds	2038 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	273 W
Rds On (Max) @ Id, Vgs	18 mOhm
Supplier Device Package	PG-TO247-3-40
Technology	SiC (Silicon Carbide Junction Transistor)
Vgs (Max)	-7 V, 23 V
Vgs(th) (Max) @ Id	5.6 V

IMW65R020 Series

Part	Vgs(th) (Max) @ Id	Mounting Type	Power Dissipation (Max)	Technology	Vgs (Max)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	FET Type	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Gate Charge (Qg) (Max) @ Vgs [Max]
Infineon Technologies IMW65R020M2HXKSA1	5.6 V	Through Hole	273 W	SiC (Silicon Carbide Junction Transistor)	-7 V 23 V	TO-247-3	2038 pF	650 V	18 mOhm	N-Channel	PG-TO247-3-40	-55 °C	175 ░C	83 A	15 V	20 V	57 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 17.07
		10	$ 15.69
		25	$ 15.04
		240	$ 12.60
		480	$ 11.78
Newark	Each	1	$ 14.54
		10	$ 11.68
		25	$ 10.77
		50	$ 10.37
		100	$ 9.95
		480	$ 9.94
		720	$ 9.38

Description

General part information

IMW65R020 Series

The CoolSiC™ MOSFET 650 V, 20 mΩ G2 in a TO-247-3 package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.

Documents

Technical documentation and resources