IMW65R020 Series

Catalog

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 83 A, 650 V, 0.018 OHM, TO-247

Part	Vgs(th) (Max) @ Id	Mounting Type	Power Dissipation (Max)	Technology	Vgs (Max)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	FET Type	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Gate Charge (Qg) (Max) @ Vgs [Max]
Infineon Technologies IMW65R020M2HXKSA1	5.6 V	Through Hole	273 W	SiC (Silicon Carbide Junction Transistor)	-7 V 23 V	TO-247-3	2038 pF	650 V	18 mOhm	N-Channel	PG-TO247-3-40	-55 °C	175 ░C	83 A	15 V	20 V	57 nC