IXYH100N65C3

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IXYS

TRANS IGBT CHIP N-CH 650V 200A 830W 3-PIN(3+TAB) TO-247AD

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Active

IXYS

TRANS IGBT CHIP N-CH 650V 200A 830W 3-PIN(3+TAB) TO-247AD

Technical Specifications

Parameters and characteristics for this part

Specification	IXYH100N65C3

Current - Collector (Ic) (Max) [Max]	200 A
Current - Collector Pulsed (Icm)	420 A
Gate Charge	164 nC
IGBT Type	PT
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	830 W
Supplier Device Package	TO-247 (IXTH)
Switching Energy	2.15 mJ, 840 µJ
Td (on/off) @ 25°C	106 ns, 28 ns
Test Condition	3 Ohm, 50 A, 15 V, 400 V
Vce(on) (Max) @ Vge, Ic	2.3 V
Voltage - Collector Emitter Breakdown (Max)	650 V

Part	Current - Collector Pulsed (Icm)	Switching Energy	Operating Temperature [Min]	Operating Temperature [Max]	Td (on/off) @ 25°C	Test Condition	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max)	Gate Charge	IGBT Type	Package / Case	Power - Max [Max]	Mounting Type	Vce(on) (Max) @ Vge, Ic	Reverse Recovery Time (trr)
IXYS IXYH100N65C3	420 A	2.15 mJ 840 µJ	-55 °C	175 ░C	28 ns 106 ns	3 Ohm 15 V 50 A 400 V	200 A	TO-247 (IXTH)	650 V	164 nC	PT	TO-247-3	830 W	Through Hole	2.3 V
IXYS IXYH100N65A3	480 A	2.2 mJ 3.15 mJ	-55 °C	175 ░C		2 Ohm 15 V 50 A 400 V	240 A	TO-247 (IXTH)	650 V	178 nC		TO-247-3	470 W	Through Hole	1.8 V	64 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT PT 650 V 200 A 830 W Through Hole TO-247 (IXTH)

Technical documentation and resources

No documents available