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TRANS IGBT CHIP N-CH 650V 200A 830W 3-PIN(3+TAB) TO-247AD
| Part | Current - Collector Pulsed (Icm) | Switching Energy | Operating Temperature [Min] | Operating Temperature [Max] | Td (on/off) @ 25°C | Test Condition | Current - Collector (Ic) (Max) [Max] | Supplier Device Package | Voltage - Collector Emitter Breakdown (Max) | Gate Charge | IGBT Type | Package / Case | Power - Max [Max] | Mounting Type | Vce(on) (Max) @ Vge, Ic | Reverse Recovery Time (trr) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | 420 A | 2.15 mJ 840 µJ | -55 °C | 175 ░C | 28 ns 106 ns | 3 Ohm 15 V 50 A 400 V | 200 A | TO-247 (IXTH) | 650 V | 164 nC | PT | TO-247-3 | 830 W | Through Hole | 2.3 V | |
IXYS | 480 A | 2.2 mJ 3.15 mJ | -55 °C | 175 ░C | 2 Ohm 15 V 50 A 400 V | 240 A | TO-247 (IXTH) | 650 V | 178 nC | TO-247-3 | 470 W | Through Hole | 1.8 V | 64 ns |