IR2304STRPBF

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Infineon Technologies

MOSFET DRIVER, -40 TO 125DEG C

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Infineon Technologies

MOSFET DRIVER, -40 TO 125DEG C

Technical Specifications

Parameters and characteristics for this part

Specification	IR2304STRPBF

Channel Type	Independent
Current - Peak Output (Source, Sink) [custom]	60 mA
Current - Peak Output (Source, Sink) [custom]	130 mA
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH [custom]	2.3 V
Logic Voltage - VIL, VIH [custom]	0.8 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Rise / Fall Time (Typ) [custom]	100 ns
Rise / Fall Time (Typ) [custom]	200 ns
Supplier Device Package	8-SOIC
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	10 VDC

Part	Operating Temperature [Max]	Operating Temperature [Min]	Logic Voltage - VIL, VIH [custom]	Logic Voltage - VIL, VIH [custom]	Number of Drivers	Input Type	Channel Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Voltage - Supply [Max]	Voltage - Supply [Min]	Driven Configuration	Package / Case	Package / Case [y]	Package / Case [x]	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Mounting Type	Gate Type	Supplier Device Package	High Side Voltage - Max (Bootstrap) [Max]	Package / Case	Package / Case
Infineon Technologies IR2304SPBF	150 °C	-40 °C	2.3 V	0.8 V	2	Non-Inverting	Independent	100 ns	200 ns	20 V	10 VDC	Half-Bridge	8-SOIC	3.9 mm	0.154 in	60 mA	130 mA	Surface Mount	IGBT N-Channel MOSFET	8-SOIC	600 V
Infineon Technologies IR2304PBF	150 °C	-40 °C	2.3 V	0.8 V	2	Non-Inverting	Independent	100 ns	200 ns	20 V	10 VDC	Half-Bridge	8-DIP			60 mA	130 mA	Through Hole	IGBT N-Channel MOSFET	8-PDIP	600 V	0.3 in	7.62 mm
Infineon Technologies IR2304	150 °C	-40 °C	2.3 V	0.8 V	2	Non-Inverting	Independent	100 ns	200 ns	20 V	10 VDC	Half-Bridge	8-DIP			60 mA	130 mA	Through Hole	IGBT N-Channel MOSFET	8-PDIP	600 V	0.3 in	7.62 mm
Infineon Technologies IR2304STRPBF	150 °C	-40 °C	2.3 V	0.8 V	2	Non-Inverting	Independent	100 ns	200 ns	20 V	10 VDC	Half-Bridge	8-SOIC	3.9 mm	0.154 in	60 mA	130 mA	Surface Mount	IGBT N-Channel MOSFET	8-SOIC	600 V
Infineon Technologies IR2304PBF	150 °C	-40 °C	2.3 V	0.8 V	2	Non-Inverting	Independent	100 ns	200 ns	20 V	10 VDC	Half-Bridge	8-DIP			60 mA	130 mA	Through Hole	IGBT N-Channel MOSFET	8-PDIP	600 V	0.3 in	7.62 mm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Half-Bridge Gate Driver IC Non-Inverting 8-SOIC

Technical documentation and resources

No documents available