EICEDRIVER™ 600 V HALF BRIDGE DRIVER IC WITH TYPICAL 0.078 A SOURCE AND 0.169 A SINK OUTPUT CURRENTS. IT COMES WITH A FUNCTIONAL LEVELSHIFT SOIC 8N PACKAGE AND WORKS WITH IGBTS AND MOSFETS. FEATURES: SHOOT THROUGH PROTECTION
| Part | Operating Temperature [Max] | Operating Temperature [Min] | Logic Voltage - VIL, VIH [custom] | Logic Voltage - VIL, VIH [custom] | Number of Drivers | Input Type | Channel Type | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Voltage - Supply [Max] | Voltage - Supply [Min] | Driven Configuration | Package / Case | Package / Case [y] | Package / Case [x] | Current - Peak Output (Source, Sink) [custom] | Current - Peak Output (Source, Sink) [custom] | Mounting Type | Gate Type | Supplier Device Package | High Side Voltage - Max (Bootstrap) [Max] | Package / Case | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 150 °C | -40 °C | 2.3 V | 0.8 V | 2 | Non-Inverting | Independent | 100 ns | 200 ns | 20 V | 10 VDC | Half-Bridge | 8-SOIC | 3.9 mm | 0.154 in | 60 mA | 130 mA | Surface Mount | IGBT N-Channel MOSFET | 8-SOIC | 600 V | ||
Infineon Technologies | 150 °C | -40 °C | 2.3 V | 0.8 V | 2 | Non-Inverting | Independent | 100 ns | 200 ns | 20 V | 10 VDC | Half-Bridge | 8-DIP | 60 mA | 130 mA | Through Hole | IGBT N-Channel MOSFET | 8-PDIP | 600 V | 0.3 in | 7.62 mm | ||
Infineon Technologies | 150 °C | -40 °C | 2.3 V | 0.8 V | 2 | Non-Inverting | Independent | 100 ns | 200 ns | 20 V | 10 VDC | Half-Bridge | 8-DIP | 60 mA | 130 mA | Through Hole | IGBT N-Channel MOSFET | 8-PDIP | 600 V | 0.3 in | 7.62 mm | ||
Infineon Technologies | 150 °C | -40 °C | 2.3 V | 0.8 V | 2 | Non-Inverting | Independent | 100 ns | 200 ns | 20 V | 10 VDC | Half-Bridge | 8-SOIC | 3.9 mm | 0.154 in | 60 mA | 130 mA | Surface Mount | IGBT N-Channel MOSFET | 8-SOIC | 600 V | ||
Infineon Technologies | 150 °C | -40 °C | 2.3 V | 0.8 V | 2 | Non-Inverting | Independent | 100 ns | 200 ns | 20 V | 10 VDC | Half-Bridge | 8-DIP | 60 mA | 130 mA | Through Hole | IGBT N-Channel MOSFET | 8-PDIP | 600 V | 0.3 in | 7.62 mm |