Zenode.ai Logo
Beta
K
PD85035STR-E - PowerSO-10RF (Straight Lead)

PD85035STR-E

Active
STMicroelectronics

RF POWER TRANSISTOR, LDMOST PLASTIC FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETS

Deep-Dive with AI

Search across all available documentation for this part.

PD85035STR-E - PowerSO-10RF (Straight Lead)

PD85035STR-E

Active
STMicroelectronics

RF POWER TRANSISTOR, LDMOST PLASTIC FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETS

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationPD85035STR-E
Current - Test350 mA
Current Rating (Amps)8 A
Frequency870 MHz
Gain17 dBi
Package / CasePowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
Power - Output15 W
Supplier Device PackagePowerSO-10RF (Straight Lead)
Voltage - Rated40 V
Voltage - Test13.6 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 31.13
10$ 28.71
25$ 27.42
100$ 24.52
250$ 23.39
Digi-Reel® 1$ 31.13
10$ 28.71
25$ 27.42
100$ 24.52
250$ 23.39
Tape & Reel (TR) 600$ 22.26

Description

General part information

PD85035-E Series

The PD85035-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85035-E boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD85035-E’s superior linearity performance makes it an ideal solution for car mobile radio.

The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294).