Technical Specifications
Parameters and characteristics for this part
| Specification | PD85035-E |
|---|---|
| Current - Test | 350 mA |
| Current Rating (Amps) | 8 A |
| Frequency | 870 MHz |
| Gain | 17 dBi |
| Package / Case | PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) |
| Power - Output | 15 W |
| Supplier Device Package | PowerSO-10RF (Formed Lead) |
| Voltage - Rated | 40 V |
| Voltage - Test | 13.6 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 400 | $ 19.96 | |
Description
General part information
PD85035-E Series
The PD85035-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85035-E boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD85035-E’s superior linearity performance makes it an ideal solution for car mobile radio.
The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294).
Documents
Technical documentation and resources