FF4MR12W2M1HB11BPSA1

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Infineon Technologies

SILICON CARBIDE MOSFET, HALF BRIDGE, N CHANNEL, 170 A, 1.2 KV, 0.004 OHM, MODULE

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Infineon Technologies

SILICON CARBIDE MOSFET, HALF BRIDGE, N CHANNEL, 170 A, 1.2 KV, 0.004 OHM, MODULE

Technical Specifications

Parameters and characteristics for this part

Specification	FF4MR12W2M1HB11BPSA1

Configuration	2 N-Channel (Half Bridge)
Current - Continuous Drain (Id) @ 25°C	170 A
Drain to Source Voltage (Vdss)	1200 V
Drain to Source Voltage (Vdss)	1.2 kV
Gate Charge (Qg) (Max) @ Vgs	594 nC
Input Capacitance (Ciss) (Max) @ Vds	17600 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 C
Package / Case	Module
Rds On (Max) @ Id, Vgs	4 mOhm
Supplier Device Package	Module
Technology	Silicon Carbide (SiC)
Vgs(th) (Max) @ Id	5.15 V

Part	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Supplier Device Package	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Configuration	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Package / Case
Infineon Technologies FF4MR12W2M1HB11BPSA1	Silicon Carbide (SiC)	170 A	5.15 V	594 nC	4 mOhm	Module	1200 V	1.2 kV	2 N-Channel (Half Bridge)	17600 pF	-40 C	175 °C	Chassis Mount	Module

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General part information

EasyDUAL™ 2BCoolSiC™ MOSFEThalf-bridge module 1200 V, 4 mΩ G1 with integrated NTC temperature sensor andPressFIT Contact Technology.

Technical documentation and resources