Beta
⌘K
SILICON CARBIDE MOSFET, HALF BRIDGE, N CHANNEL, 170 A, 1.2 KV, 0.004 OHM, MODULE
| Part | Technology | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs | Supplier Device Package | Drain to Source Voltage (Vdss) | Drain to Source Voltage (Vdss) | Configuration | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | Silicon Carbide (SiC) | 170 A | 5.15 V | 594 nC | 4 mOhm | Module | 1200 V | 1.2 kV | 2 N-Channel (Half Bridge) | 17600 pF | -40 C | 175 °C | Chassis Mount | Module |