SSM3J16CT(TPL3)

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Toshiba Semiconductor and Storage

MOSFET P-CH 20V 100MA CST3

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Toshiba Semiconductor and Storage

MOSFET P-CH 20V 100MA CST3

Technical Specifications

Parameters and characteristics for this part

Specification	SSM3J16CT(TPL3)

Current - Continuous Drain (Id) @ 25°C	100 mA
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	1.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	11 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-883, SC-101
Power Dissipation (Max)	100 mW
Rds On (Max) @ Id, Vgs	8 Ohm
Supplier Device Package	CST3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1.1 V

Part	Operating Temperature	Vgs(th) (Max) @ Id	FET Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Power Dissipation (Max)	Package / Case	Vgs (Max)	Mounting Type	Technology	Supplier Device Package
Toshiba Semiconductor and Storage SSM3J16CT(TPL3)	150 °C	1.1 V	P-Channel	8 Ohm	100 mA	20 V	11 pF	4 V	1.5 V	100 mW	SC-101 SOT-883	10 V	Surface Mount	MOSFET (Metal Oxide)	CST3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 20 V 100mA (Ta) 100mW (Ta) Surface Mount CST3

Technical documentation and resources

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