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MOSFET P-CH 20V 100MA CST3
| Part | Operating Temperature | Vgs(th) (Max) @ Id | FET Type | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Power Dissipation (Max) | Package / Case | Vgs (Max) | Mounting Type | Technology | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 150 °C | 1.1 V | P-Channel | 8 Ohm | 100 mA | 20 V | 11 pF | 4 V | 1.5 V | 100 mW | SC-101 SOT-883 | 10 V | Surface Mount | MOSFET (Metal Oxide) | CST3 |