IRF7401TRPBF

Obsolete

Infineon Technologies

IR MOSFET™ N-CHANNEL POWER MOSFET ; SO-8 PACKAGE; 22 MOHM;

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Obsolete

Infineon Technologies

IR MOSFET™ N-CHANNEL POWER MOSFET ; SO-8 PACKAGE; 22 MOHM;

Technical Specifications

Parameters and characteristics for this part

Specification	IRF7401TRPBF

Current - Continuous Drain (Id) @ 25°C	8.7 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.7 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	48 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1600 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	2.5 W
Rds On (Max) @ Id, Vgs	22 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	700 mV

Part	Package / Case	Package / Case [y]	Package / Case [x]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Vgs(th) (Max) @ Id	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drain to Source Voltage (Vdss)	FET Type	Technology	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Supplier Device Package
Infineon Technologies IRF7401TRPBF	8-SOIC	3.9 mm	0.154 in	8.7 A	Surface Mount	700 mV	12 V	1600 pF	48 nC	4.5 V	2.7 V	20 V	N-Channel	MOSFET (Metal Oxide)	22 mOhm	-55 °C	150 °C	2.5 W	8-SO

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$