IR MOSFET™ N-CHANNEL POWER MOSFET ; SO-8 PACKAGE; 22 MOHM;
| Part | Package / Case | Package / Case [y] | Package / Case [x] | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Vgs(th) (Max) @ Id | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drain to Source Voltage (Vdss) | FET Type | Technology | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 8-SOIC | 3.9 mm | 0.154 in | 8.7 A | Surface Mount | 700 mV | 12 V | 1600 pF | 48 nC | 4.5 V | 2.7 V | 20 V | N-Channel | MOSFET (Metal Oxide) | 22 mOhm | -55 °C | 150 °C | 2.5 W | 8-SO |