IPW90R500C3XKSA1

Active

Infineon Technologies

MOSFET, N-CH, 900V, 11A, 150DEG C, 156W

Search across all available documentation for this part.

Active

Infineon Technologies

MOSFET, N-CH, 900V, 11A, 150DEG C, 156W

Technical Specifications

Parameters and characteristics for this part

Specification	IPW90R500C3XKSA1

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	900 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	68 nC
Input Capacitance (Ciss) (Max) @ Vds	1700 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	156 W
Rds On (Max) @ Id, Vgs	500 mOhm
Supplier Device Package	PG-TO247-3-21
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	FET Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Supplier Device Package	Vgs(th) (Max) @ Id	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Mounting Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs (Max)
Infineon Technologies IPW90R500C3XKSA1	N-Channel	11 A	-55 °C	150 °C	156 W	PG-TO247-3-21	3.5 V	TO-247-3	68 nC	1700 pF	500 mOhm	Through Hole	900 V	10 V	MOSFET (Metal Oxide)	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 900 V 11A (Tc) 156W (Tc) Through Hole PG-TO247-3-21

Technical documentation and resources