Beta
⌘K
MOSFET, N-CH, 900V, 11A, 150DEG C, 156W
| Part | FET Type | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) | Supplier Device Package | Vgs(th) (Max) @ Id | Package / Case | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Mounting Type | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Technology | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | N-Channel | 11 A | -55 °C | 150 °C | 156 W | PG-TO247-3-21 | 3.5 V | TO-247-3 | 68 nC | 1700 pF | 500 mOhm | Through Hole | 900 V | 10 V | MOSFET (Metal Oxide) | 20 V |