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STB6NK60Z-1 - TO-262-3 Long Leads

STB6NK60Z-1

NRND
STMicroelectronics

N-CHANNEL 600 V - 1 OHM - 6 A - I2PAK ZENER-PROTECTED SUPERMESH(TM) POWER MOSFET

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Search across all available documentation for this part.

DocumentsDatasheetDS2754+16
STB6NK60Z-1 - TO-262-3 Long Leads

STB6NK60Z-1

NRND
STMicroelectronics

N-CHANNEL 600 V - 1 OHM - 6 A - I2PAK ZENER-PROTECTED SUPERMESH(TM) POWER MOSFET

Deep-Dive with AI

DocumentsDatasheetDS2754+16

Technical Specifications

Parameters and characteristics for this part

SpecificationSTB6NK60Z-1
Current - Continuous Drain (Id) @ 25°C6 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs46 nC
Input Capacitance (Ciss) (Max) @ Vds905 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max) [Max]110 W
Rds On (Max) @ Id, Vgs1.2 Ohm
Supplier Device PackageI2PAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 2000$ 0.52

Description

General part information

STB6NK60Z-1 Series

The SuperMESH™series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.