STB6NK60Z-1 Series

N-channel 600 V - 1 Ohm - 6 A - I2PAK Zener-Protected SuperMESH(TM) Power MOSFET

Catalog

N-channel 600 V - 1 Ohm - 6 A - I2PAK Zener-Protected SuperMESH(TM) Power MOSFET

Part	Package / Case	Rds On (Max) @ Id, Vgs	Technology	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	FET Type	Vgs (Max)	Power Dissipation (Max) [Max]
STMicroelectronics STB6NK60Z-1	I2PAK TO-262-3 Long Leads TO-262AA	1.2 Ohm	MOSFET (Metal Oxide)	905 pF	600 V	4.5 V	10 V	Through Hole	-55 °C	150 °C	46 nC	I2PAK	6 A	N-Channel	30 V	110 W

Catalog

N-channel 600 V - 1 Ohm - 6 A - I2PAK Zener-Protected SuperMESH(TM) Power MOSFET

Description

The SuperMESH™series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.