DZT5551Q-13

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Diodes Inc

PWR HI VOLTAGE TRANSISTOR SOT223 T&R 2.5K

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Diodes Inc

PWR HI VOLTAGE TRANSISTOR SOT223 T&R 2.5K

Technical Specifications

Parameters and characteristics for this part

Specification	DZT5551Q-13

Current - Collector (Ic) (Max) [Max]	600 mA
Current - Collector Cutoff (Max) [Max]	50 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	80
Frequency - Transition	300 MHz
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power - Max [Max]	2 W
Qualification	AEC-Q101
Supplier Device Package	SOT-223-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	200 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	160 V

NPN, 160V, 0.6A, SOT223

Part	Frequency - Transition	Grade	Current - Collector (Ic) (Max) [Max]	Package / Case	Vce Saturation (Max) @ Ib, Ic	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Qualification	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Transistor Type	Supplier Device Package
Diodes Inc DZT5551Q-13	300 MHz	Automotive	600 mA	TO-261-4 TO-261AA	200 mV	-55 °C	150 °C	2 W	80	AEC-Q101	Surface Mount	160 V	50 µA	NPN	SOT-223-3
Diodes Inc DZT5551-13	300 MHz		600 mA	TO-261-4 TO-261AA	200 mV	-55 °C	150 °C	1 W	80		Surface Mount	160 V	50 nA	NPN	SOT-223-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications.

Technical documentation and resources